PART |
Description |
Maker |
ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-21170 |
0.5-6 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TLA-18-6004 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
|
CLA-18-6007 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CLA-18-6004 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|